☑ Fast Body Diode

These devices come with improved ruggedness with the body diodes against difficult hard commutation conditions. With a 950 v to 1050 v breakdown voltage mdmesh dk5 mosfets are sts first very high voltage fast recovery diode series of n channel power mosfets.

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Introduces the new optimos fd fast diode product family.

Fast body diode. Even after the low side switch turns on the body diode doesnt turn off for a period t rr the reverse recovery time during which charges within the pn device must recombine. Ruggedness to the stress due to the trigger on of the parasitic bipolar. The intrinsic body diode with low trr and low qrr.

Diodes line of fastultra fast rectifiers offers fast recovery rectifiers ultra fast recovery rectifiers and ultra fast rectifiers. The application note explains how the better switching behavior of optimos fd devices improves system reliability and performance. Drain source body diode characteristics continuous source drain diode current is mosfet symbol showing the integral reverse p n junction diode 47 a pulsed diode forward current ism 138 diode forward voltage vsd tj 25 0c is 24 a vgs 0 v 09 12 v body diode reverse recovery time trr tj 25 0c if is 24 a didt 100 ams vr 400 v.

While the body diode is in reverse recovery its drain source voltage rises. This behavior can cause a false turn on of the internal parasitic npn bipolar transistor destroying the mosfet. The body diode of a typical mosfet is very slow.

In order to maintain fast switching for high efficiency it is necessary to select mosfets with fast intrinsic body diodes or to add additional circuitry to ensure the body diode. Mosfets have a failure mechanism caused by high d v dt on the mosfet body diode. The new fd fast diode mosfet has straightforward advantages in terms of trr qrr irm and ruggedness in dvdt.

By using the fast body diode unifet the power supply efficiency can be improved or other trade off such as cost reduction size reduction or increase in power density as presented here. They feature a very low gate charge as low as 45 nc and the industrys best reverse recovery time t rr of 250 ns typ making them ideal for zvs llc resonant converters in. To meet the need related to the body diode a new technology has been developed.

The first is an i l v d term during. Two parts of the mosfets loss model are associated with the body diode in this scenario. A new fast body diode unifet is presented for the switched mode power supply smps ups and solar inverters market.